Intrinsic gain is a vital figure of merit in transistors, closely related to signal amplification, operation voltage,power consumption, and circuit simplification. However, organic thin-film transistors (OTFTs) targeted at highgain have suffered from challenges such as narrow subthreshold operating voltage, low-quality interface, anduncontrollable barrier. Here, we report a van der Waals metal-barrier interlayer-semiconductor junction–basedOTFT, which shows ultrahigh performance including ultrahigh gain of ~104, low saturation voltage, negligiblehysteresis, and good stability. The high-quality van der Waals–contacted junctions are mainly attributed to pat-terning EGaIn liquid metal electrodes by low-energy microfluidic processes. The wide-bandgap semiconductorGa2O3 as barrier interlayer is achieved by in situ surface oxidation of EGaIn electrodes, allowing for an adjustablebarrier height and expected thermionic emission properties. The organic inverters with a high gain of 5130 anda simplified current stabilizer are further demonstrated, paving a way for high-gain and low-power organicelectronics.

图1：超高增益有机薄膜晶体管（MBIS-OTFT）和本征增益统计图。

图2. MBIS-OTFT的电学性质。

图3. 高性能的电路应用：高增益反相器和稳流器。

Link:https://www.science.org/doi/10.1126/sciadv.adj4656